TQIN Semiconductor Limited

BUK9E4R9-60E,127

TQIN Code

TQ-BUK9E4R9-60E,127

Manufacturer

NXP USA Inc.

Mfr Part #

BUK9E4R9-60E,127

Detailed Description

N-Channel 60 V 100A (Tc) 234W (Tc) Through Hole I2PAK

DataSheet

Product Attributes

Package	Tube
Product Status	Obsolete
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On Min Rds On)	5V 10V
Package / Case	TO-262-3 Long Leads I²Pak TO-262AA
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Vgs (Max)	±10V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 5 V
Power Dissipation (Max)	234W (Tc)
Supplier Device Package	I2PAK
Rds On (Max) @ Id Vgs	4．5mOhm @ 25A 10V
Series	TrenchMOS™
Vgs(th) (Max) @ Id	2．1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	9710 pF @ 25 V
Base Product Number	BUK9
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

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