2SK2847(F)
TQIN Code
TQ-2SK2847(F)
Manufacturer
Toshiba Semiconductor and Storage
Mfr Part #
2SK2847(F)
Detailed Description
N-Channel 900 V 8A (Ta) 85W (Tc) Through Hole TO-3P(N)IS
DataSheet
Product Attributes
TYPE
DESCRIPTION
Package
Tube
Product Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Package / Case
TO-3P-3 SC-65-3
Power Dissipation (Max)
85W (Tc)
Vgs(th) (Max) @ Id
4V @ 1mA
FET Type
N-Channel
Drive Voltage (Max Rds On Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
Drain to Source Voltage (Vdss)
900 V
Rds On (Max) @ Id Vgs
1.4Ohm @ 4A 10V
Supplier Device Package
TO-3P(N)IS
Base Product Number
2SK2847
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
In Stock: 0
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