TQIN Semiconductor Limited

TK22A10N1,S4X

TQIN Code

TQ-TK22A10N1,S4X

Manufacturer

Toshiba Semiconductor and Storage

Mfr Part #

TK22A10N1,S4X

Detailed Description

N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	30W (Tc)
FET Type	N-Channel
Drive Voltage (Max Rds On Min Rds On)	10V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
Rds On (Max) @ Id Vgs	13．8mOhm @ 11A 10V
Supplier Device Package	TO-220SIS
Series	U-MOSVIII-H
Vgs(th) (Max) @ Id	4V @ 300µA
Base Product Number	TK22A10
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

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