TQIN Semiconductor Limited

TK6R7A10PL,S4X

TQIN Code

TQ-TK6R7A10PL,S4X

Manufacturer

Toshiba Semiconductor and Storage

Mfr Part #

TK6R7A10PL,S4X

Detailed Description

N-Channel 100 V 56A (Tc) 42W (Tc) Through Hole TO-220SIS

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Drive Voltage (Max Rds On Min Rds On)	4．5V 10V
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	42W (Tc)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Vgs(th) (Max) @ Id	2．5V @ 500µA
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Operating Temperature	175°C
Supplier Device Package	TO-220SIS
Rds On (Max) @ Id Vgs	6．7mOhm @ 28A 10V
Input Capacitance (Ciss) (Max) @ Vds	3455 pF @ 50 V
Base Product Number	TK6R7A10
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

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