TQIN Semiconductor Limited

TK31J60W,S1VQ

TQIN Code

TQ-TK31J60W,S1VQ

Manufacturer

Toshiba Semiconductor and Storage

Mfr Part #

TK31J60W,S1VQ

Detailed Description

N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Package / Case	TO-3P-3 SC-65-3
FET Type	N-Channel
Drive Voltage (Max Rds On Min Rds On)	10V
Drain to Source Voltage (Vdss)	600 V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Supplier Device Package	TO-3P(N)
Series	DTMOSIV
Vgs(th) (Max) @ Id	3．7V @ 1．5mA
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
Current - Continuous Drain (Id) @ 25°C	30．8A (Ta)
Rds On (Max) @ Id Vgs	88mOhm @ 15．4A 10V
Base Product Number	TK31J60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25

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