TQIN Semiconductor Limited

TK17A80W,S4X

TQIN Code

TQ-TK17A80W,S4X

Manufacturer

Toshiba Semiconductor and Storage

Mfr Part #

TK17A80W,S4X

Detailed Description

N-Channel 800 V 17A (Ta) 45W (Tc) Through Hole TO-220SIS

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45W (Tc)
FET Type	N-Channel
Operating Temperature	150°C
Drive Voltage (Max Rds On Min Rds On)	10V
Rds On (Max) @ Id Vgs	290mOhm @ 8．5A 10V
Vgs(th) (Max) @ Id	4V @ 850µA
Supplier Device Package	TO-220SIS
Series	DTMOSIV
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 300 V
Base Product Number	TK17A80
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

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