TK8A50D(STA4,Q,M)
TQIN Code
TQ-TK8A50D(STA4,Q,M)
Manufacturer
Toshiba Semiconductor and Storage
Mfr Part #
TK8A50D(STA4,Q,M)
Detailed Description
N-Channel 500 V 8A (Ta) 40W (Tc) Through Hole TO-220SIS
DataSheet
Product Attributes
TYPE
DESCRIPTION
Product Status
Active
Package
Tube
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Package / Case
TO-220-3 Full Pack
Rds On (Max) @ Id Vgs
850mOhm @ 4A 10V
Power Dissipation (Max)
40W (Tc)
Vgs(th) (Max) @ Id
4V @ 1mA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Drive Voltage (Max Rds On Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Supplier Device Package
TO-220SIS
Series
π-MOSVII
Base Product Number
TK8A50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
In Stock: 0
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