TQIN Semiconductor Limited

TK3R1E04PL,S1X

TQIN Code

TQ-TK3R1E04PL,S1X

Manufacturer

Toshiba Semiconductor and Storage

Mfr Part #

TK3R1E04PL,S1X

Detailed Description

N-Channel 40 V 100A (Tc) 87W (Tc) Through Hole TO-220

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Drive Voltage (Max Rds On Min Rds On)	4．5V 10V
Vgs (Max)	±20V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Package / Case	TO-220-3
Operating Temperature	175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	87W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	63．4 nC @ 10 V
Series	U-MOSIX-H
Rds On (Max) @ Id Vgs	3．8mOhm @ 30A 4．5V
Vgs(th) (Max) @ Id	2．4V @ 500µA
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 20 V
Base Product Number	TK3R1E04
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

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