TPW4R50ANH,L1Q
TQIN Code
TQ-TPW4R50ANH,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Mfr Part #
TPW4R50ANH,L1Q
Detailed Description
N-Channel 100 V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
DataSheet
Product Attributes
TYPE
DESCRIPTION
Product Status
Active
Mounting Type
Surface Mount
Package
Tape & Reel (TR)Cut Tape (CT)
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Package / Case
8-PowerWDFN
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 50 V
Vgs(th) (Max) @ Id
4V @ 1mA
Current - Continuous Drain (Id) @ 25°C
92A (Tc)
FET Type
N-Channel
Drive Voltage (Max Rds On Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Series
U-MOSVIII-H
Supplier Device Package
8-DSOP Advance
Power Dissipation (Max)
800mW (Ta) 142W (Tc)
Rds On (Max) @ Id Vgs
4.5mOhm @ 46A 10V
Base Product Number
TPW4R50
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5 000
In Stock: 0
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