TQIN Semiconductor Limited

DMG3N60SJ3

TQIN Code

TQ-DMG3N60SJ3

Manufacturer

Diodes Incorporated

Mfr Part #

DMG3N60SJ3

Detailed Description

N-Channel 650 V 2.8A (Tc) 41W (Tc) Through Hole TO-251

DataSheet

Product Attributes

Package	Tube
Product Status	Obsolete
Mounting Type	Through Hole
Voltage - Input (Min)	10V
Output Type	N-Channel
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	2．8A (Tc)
Package / Case	TO-251-3 Short Leads IPak TO-251AA
Power Dissipation (Max)	41W (Tc)
Series	Automotive AEC-Q101
Supplier Device Package	TO-251
Rds On (Max) @ Id Vgs	3．5Ohm @ 1．5A 10V
Gate Charge (Qg) (Max) @ Vgs	12．6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	354 pF @ 25 V
Base Product Number	DMG3N60
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	75

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