R6018VNXC7G
TQIN Code
TQ-R6018VNXC7G
Manufacturer
Rohm Semiconductor
Mfr Part #
R6018VNXC7G
Detailed Description
N-Channel 600 V 10A (Tc) 61W (Tc) Through Hole TO-220FM
DataSheet
Product Attributes
TYPE
DESCRIPTION
Product Status
Active
Package
Tube
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Package / Case
TO-220-3 Full Pack
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-220FM
Drive Voltage (Max Rds On Min Rds On)
10V 15V
Rds On (Max) @ Id Vgs
204mOhm @ 4A 15V
Vgs(th) (Max) @ Id
6.5V @ 600µA
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 100 V
Power Dissipation (Max)
61W (Tc)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
In Stock: 0
Fill in below information to get a quote:
Submit
You May Also Be Interested In
PMCM6501VNE023
TQ-PMCM6501VNE023
NXP USA Inc.
IXFH30N40Q
TQ-IXFH30N40Q
IXYS
2SK3991-ZK-E1-AZ
TQ-2SK3991-ZK-E1-AZ
Renesas Electronics America Inc