APT10M11B2VFRG
TQIN Code
TQ-APT10M11B2VFRG
Manufacturer
Microsemi Corporation
Mfr Part #
APT10M11B2VFRG
Detailed Description
N-Channel 100 V 100A (Tc) 520W (Tc) Through Hole T-MAX™
DataSheet
Product Attributes
TYPE
DESCRIPTION
Package
Tube
Product Status
Obsolete
Mounting Type
Through Hole
Voltage - Input (Min)
10V
Maximum DC Volts
100 V
Output Type
N-Channel
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±30V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Power Dissipation (Max)
520W (Tc)
Vgs(th) (Max) @ Id
4V @ 2.5mA
Package / Case
TO-247-3 Variant
Series
POWER MOS V®
Supplier Device Package
T-MAX™
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Rds On (Max) @ Id Vgs
11mOhm @ 500mA 10V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 25 V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
In Stock: 0
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