TQIN Semiconductor Limited

R1RW0416DGE-2PR#B0

TQIN Code

TQ-R1RW0416DGE-2PR#B0

Manufacturer

Renesas Electronics America Inc

Mfr Part #

R1RW0416DGE-2PR#B0

Detailed Description

SRAM Memory IC 4Mb (256K x 16) Parallel 12 ns 44-SOJ

DataSheet

Product Attributes

Package	Tube
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Supply	3V ~ 3．6V
Memory Type	Volatile
Operating Temperature	0°C ~ 70°C (TA)
Write Cycle Time - Word Page	12ns
Memory Format	SRAM
Package / Case	44-BSOJ (0．400" 10．16mm Width)
Supplier Device Package	44-SOJ
Memory Size	4Mb (256K x 16)
Access Time	12 ns
Memory Interface	Parallel
Technology	SRAM
Base Product Number	R1RW0416
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	3A991B2A
HTSUS	8542.32.0041
Standard Package	18

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