TQIN Semiconductor Limited

FDFMA2P859T

TQIN Code

TQ-FDFMA2P859T

Manufacturer

onsemi

Mfr Part #

FDFMA2P859T

Detailed Description

P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin

DataSheet

Product Attributes

Mounting Type	Surface Mount
Package	Bulk
Product Status	Obsolete
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Power Dissipation (Max)	1．4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id	1．3V @ 250µA
Vgs (Max)	±8V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On Min Rds On)	1．8V 4．5V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4．5 V
FET Feature	Schottky Diode (Isolated)
Package / Case	6-UDFN Exposed Pad
Rds On (Max) @ Id Vgs	120mOhm @ 3A 4．5V
Drain to Source Voltage (Vdss)	20 V
Series	PowerTrench®
Supplier Device Package	MicroFET 2x2 Thin
Base Product Number	FDFMA2
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 10 V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3 000

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