TQIN Semiconductor Limited

FQI12N50TU

TQIN Code

TQ-FQI12N50TU

Manufacturer

onsemi

Mfr Part #

FQI12N50TU

Detailed Description

N-Channel 500 V 12.1A (Tc) 3.13W (Ta), 179W (Tc) Through Hole I2PAK (TO-262)

DataSheet

Product Attributes

Package	Tube
Product Status	Obsolete
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Package / Case	TO-262-3 Long Leads I²Pak TO-262AA
FET Type	N-Channel
Series	QFET®
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On Min Rds On)	10V
Supplier Device Package	I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C	12．1A (Tc)
Base Product Number	FQI1
Rds On (Max) @ Id Vgs	490mOhm @ 6．05A 10V
Input Capacitance (Ciss) (Max) @ Vds	2020 pF @ 25 V
Power Dissipation (Max)	3．13W (Ta) 179W (Tc)
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1 000

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