TQIN Semiconductor Limited

IPB26CNE8N G

TQIN Code

TQ-IPB26CNE8N G

Manufacturer

Infineon Technologies

Mfr Part #

IPB26CNE8N G

Detailed Description

N-Channel 85 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3

DataSheet

Product Attributes

Mounting Type	Surface Mount
Product Status	Discontinued at Digi-Key
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Package / Case	TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Operating Temperature	-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
FET Type	N-Channel
Drive Voltage (Max Rds On Min Rds On)	10V
Power Dissipation (Max)	71W (Tc)
Supplier Device Package	PG-TO263-3
Series	OptiMOS™
Drain to Source Voltage (Vdss)	85 V
Rds On (Max) @ Id Vgs	26mOhm @ 35A 10V
Vgs(th) (Max) @ Id	4V @ 39µA
Base Product Number	IPB26C
Input Capacitance (Ciss) (Max) @ Vds	2070 pF @ 40 V
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1 000

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