TQIN Semiconductor Limited

IPP200N15N3GXKSA1

TQIN Code

TQ-IPP200N15N3GXKSA1

Manufacturer

Infineon Technologies

Mfr Part #

IPP200N15N3GXKSA1

Detailed Description

N-Channel 150 V 50A (Tc) 150W (Tc) Through Hole PG-TO220-3

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Operating Temperature	-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Drive Voltage (Max Rds On Min Rds On)	8V 10V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Package / Case	TO-220-3
Power Dissipation (Max)	150W (Tc)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	150 V
Rds On (Max) @ Id Vgs	20mOhm @ 50A 10V
Vgs(th) (Max) @ Id	4V @ 90µA
Series	OptiMOS™
Supplier Device Package	PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds	1820 pF @ 75 V
Base Product Number	IPP200
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

In Stock： 0

Fill in below information to get a quote:

Submit