TQIN Semiconductor Limited

IPS06N03LZ G

TQIN Code

TQ-IPS06N03LZ G

Manufacturer

Infineon Technologies

Mfr Part #

IPS06N03LZ G

Detailed Description

N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO251-3-11

DataSheet

Product Attributes

Package	Tube
Product Status	Obsolete
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Drive Voltage (Max Rds On Min Rds On)	4．5V 10V
Vgs (Max)	±20V
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	83W (Tc)
Package / Case	TO-251-3 Stub Leads IPak
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 5 V
Series	OptiMOS™
Vgs(th) (Max) @ Id	2V @ 40µA
Rds On (Max) @ Id Vgs	5．9mOhm @ 30A 10V
Input Capacitance (Ciss) (Max) @ Vds	2653 pF @ 15 V
Supplier Device Package	PG-TO251-3-11
Base Product Number	IPS06N
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1 500

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