TQIN Semiconductor Limited

IPW65R045C7FKSA1

TQIN Code

TQ-IPW65R045C7FKSA1

Manufacturer

Infineon Technologies

Mfr Part #

IPW65R045C7FKSA1

Detailed Description

N-Channel 650 V 46A (Tc) 227W (Tc) Through Hole PG-TO247-3-1

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Package / Case	TO-247-3
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Drive Voltage (Max Rds On Min Rds On)	10V
Power Dissipation (Max)	227W (Tc)
Series	CoolMOS™ C7
Supplier Device Package	PG-TO247-3-1
Rds On (Max) @ Id Vgs	45mOhm @ 24．9A 10V
Vgs(th) (Max) @ Id	4V @ 1．25mA
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 400 V
Base Product Number	IPW65R045
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

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