TQIN Semiconductor Limited

IPP65R380C6XKSA1

TQIN Code

TQ-IPP65R380C6XKSA1

Manufacturer

Infineon Technologies

Mfr Part #

IPP65R380C6XKSA1

Detailed Description

N-Channel 650 V 10.6A (Tc) 83W (Tc) Through Hole PG-TO220-3

DataSheet

Product Attributes

Package	Tube
Product Status	Obsolete
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Power Dissipation (Max)	83W (Tc)
Package / Case	TO-220-3
FET Type	N-Channel
Rds On (Max) @ Id Vgs	380mOhm @ 3．2A 10V
Drive Voltage (Max Rds On Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10．6A (Tc)
Series	CoolMOS™
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	3．5V @ 320µA
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
Base Product Number	IPP65R
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	500

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