TQIN Semiconductor Limited

IPW65R190CFDFKSA2

TQIN Code

TQ-IPW65R190CFDFKSA2

Manufacturer

Infineon Technologies

Mfr Part #

IPW65R190CFDFKSA2

Detailed Description

N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3-41

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
FET Type	N-Channel
Power Dissipation (Max)	151W (Tc)
Drive Voltage (Max Rds On Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	17．5A (Tc)
Supplier Device Package	PG-TO247-3-41
Rds On (Max) @ Id Vgs	190mOhm @ 7．3A 10V
Series	CoolMOS™ CFD2
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 100 V
Vgs(th) (Max) @ Id	4．5V @ 700µA
Base Product Number	IPW65R190
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

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