IRF5210STRRPBF
TQIN Code
TQ-IRF5210STRRPBF
Manufacturer
Infineon Technologies
Mfr Part #
IRF5210STRRPBF
Detailed Description
P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK
DataSheet
Product Attributes
TYPE
DESCRIPTION
Mounting Type
Surface Mount
Package
Tape & Reel (TR)Cut Tape (CT)
Product Status
Last Time Buy
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Supplier Device Package
D2PAK
Drive Voltage (Max Rds On Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Series
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
Rds On (Max) @ Id Vgs
60mOhm @ 38A 10V
Power Dissipation (Max)
3.1W (Ta) 170W (Tc)
Base Product Number
IRF5210
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
In Stock: 12,000 Can Ship Immediately
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