TQIN Semiconductor Limited

IRF7807VD1PBF

TQIN Code

TQ-IRF7807VD1PBF

Manufacturer

Infineon Technologies

Mfr Part #

IRF7807VD1PBF

Detailed Description

N-Channel 30 V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

DataSheet

Product Attributes

Package	Tube
Mounting Type	Surface Mount
Product Status	Obsolete
Package / Case	8-SOIC (0．154" 3．90mm Width)
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA
FET Feature	Schottky Diode (Isolated)
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4．5 V
Current - Continuous Drain (Id) @ 25°C	8．3A (Ta)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2．5W (Ta)
Drive Voltage (Max Rds On Min Rds On)	4．5V
Series	FETKY™
Rds On (Max) @ Id Vgs	25mOhm @ 7A 4．5V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	95

In Stock： 7,200 Can Ship Immediately

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