TQIN Semiconductor Limited

IRF6646TR1PBF

TQIN Code

TQ-IRF6646TR1PBF

Manufacturer

Infineon Technologies

Mfr Part #

IRF6646TR1PBF

Detailed Description

N-Channel 80 V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN

DataSheet

Product Attributes

Mounting Type	Surface Mount
Product Status	Obsolete
Package	Tape & Reel (TR)Cut Tape (CT)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
FET Type	N-Channel
Drive Voltage (Max Rds On Min Rds On)	10V
Rds On (Max) @ Id Vgs	9．5mOhm @ 12A 10V
Series	HEXFET®
Power Dissipation (Max)	2．8W (Ta) 89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 25 V
Vgs(th) (Max) @ Id	4．9V @ 150µA
Supplier Device Package	DIRECTFET™ MN
Package / Case	DirectFET™ Isometric MN
Current - Continuous Drain (Id) @ 25°C	12A (Ta) 68A (Tc)
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1 000

In Stock： 8,100 Can Ship Immediately

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