TQIN Semiconductor Limited

IPU50R950CEBTMA1

TQIN Code

TQ-IPU50R950CEBTMA1

Manufacturer

Infineon Technologies

Mfr Part #

IPU50R950CEBTMA1

Detailed Description

N-Channel 500 V 4.3A (Tc) 34W (Tc) Through Hole PG-TO251-3-345

DataSheet

Product Attributes

Product Status	Active
Package	Bulk
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	10．5 nC @ 10 V
Package / Case	TO-251-3 Short Leads IPak TO-251AA
Power Dissipation (Max)	34W (Tc)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	500 V
Vgs(th) (Max) @ Id	3．5V @ 100µA
Current - Continuous Drain (Id) @ 25°C	4．3A (Tc)
Drive Voltage (Max Rds On Min Rds On)	13V
Rds On (Max) @ Id Vgs	950mOhm @ 1．2A 13V
Input Capacitance (Ciss) (Max) @ Vds	231 pF @ 100 V
Series	CoolMOS CE™
Supplier Device Package	PG-TO251-3-345
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

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