TQIN Semiconductor Limited

IPS65R1K4C6

TQIN Code

TQ-IPS65R1K4C6

Manufacturer

Infineon Technologies

Mfr Part #

IPS65R1K4C6

Detailed Description

N-Channel 650 V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3

DataSheet

Product Attributes

Product Status	Active
Package	Bulk
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	10．5 nC @ 10 V
Rds On (Max) @ Id Vgs	1．4Ohm @ 1A 10V
Package / Case	TO-251-3 Short Leads IPak TO-251AA
Power Dissipation (Max)	28W (Tc)
FET Type	N-Channel
Vgs(th) (Max) @ Id	3．5V @ 100µA
Current - Continuous Drain (Id) @ 25°C	3．2A (Tc)
Supplier Device Package	PG-TO251-3
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
Series	CoolMOS™ C6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

In Stock： 10,000 Can Ship Immediately

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