NTD4860N-35G
TQIN Code
TQ-NTD4860N-35G
Manufacturer
onsemi
Mfr Part #
NTD4860N-35G
Detailed Description
N-Channel 25 V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Through Hole I-Pak
DataSheet
Product Attributes
TYPE
DESCRIPTION
Package
Tube
Product Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Stub Leads IPak
Rds On (Max) @ Id Vgs
7.5mOhm @ 30A 10V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 4.5 V
Supplier Device Package
I-PAK
Base Product Number
NTD48
Power Dissipation (Max)
1.28W (Ta) 50W (Tc)
Current - Continuous Drain (Id) @ 25°C
10.4A (Ta) 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1308 pF @ 12 V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
In Stock: 0
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