NTD4815NH-1G
TQIN Code
TQ-NTD4815NH-1G
Manufacturer
onsemi
Mfr Part #
NTD4815NH-1G
Detailed Description
N-Channel 30 V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-PAK
DataSheet
Product Attributes
TYPE
DESCRIPTION
Package
Tube
Product Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads IPak TO-251AA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 4.5 V
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Rds On (Max) @ Id Vgs
15mOhm @ 30A 10V
Supplier Device Package
I-PAK
Drive Voltage (Max Rds On Min Rds On)
4.5V 11.5V
Base Product Number
NTD48
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta) 35A (Tc)
Power Dissipation (Max)
1.26W (Ta) 32.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
845 pF @ 12 V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
In Stock: 0
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