TQIN Semiconductor Limited

RM11N800T2

TQIN Code

TQ-RM11N800T2

Manufacturer

Mfr Part #

RM11N800T2

Detailed Description

N-Channel 800 V 11A (Tc) 188W (Tc) Through Hole TO-220-3

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id	4V @ 250µA
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	800 V
Package / Case	TO-220-3
Rds On (Max) @ Id Vgs	420mOhm @ 5．5A 10V
FET Type	N-Channel
Supplier Device Package	TO-220-3
Drive Voltage (Max Rds On Min Rds On)	10V
Power Dissipation (Max)	188W (Tc)
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 50 V
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Standard Package	1 000

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