TQIN Semiconductor Limited

SPP02N60C3IN

TQIN Code

TQ-SPP02N60C3IN

Manufacturer

Infineon Technologies

Mfr Part #

SPP02N60C3IN

Detailed Description

N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1

DataSheet

Product Attributes

Product Status	Active
Package	Bulk
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Operating Temperature	-55°C ~ 150°C (TJ)
Vgs (Max)	±20V
Gate Charge (Qg) (Max) @ Vgs	12．5 nC @ 10 V
Package / Case	TO-220-3
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Type	N-Channel
Drive Voltage (Max Rds On Min Rds On)	10V
Power Dissipation (Max)	25W (Tc)
Drain to Source Voltage (Vdss)	600 V
Series	CoolMOS™
Current - Continuous Drain (Id) @ 25°C	1．8A (Tc)
Supplier Device Package	PG-TO220-3-1
Rds On (Max) @ Id Vgs	3Ohm @ 1．1A 10V
Vgs(th) (Max) @ Id	3．9V @ 80µA
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

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