6116LA20TDB
TQIN Code
TQ-6116LA20TDB
Manufacturer
Renesas Electronics America Inc
Mfr Part #
6116LA20TDB
Detailed Description
SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parallel 20 ns 24-CDIP
DataSheet
Product Attributes
TYPE | DESCRIPTION |
|---|
Package | Tray |
Mounting Type | Through Hole |
Product Status | Last Time Buy |
Memory Size | 16Kb (2K x 8) |
Operating Temperature | -55°C ~ 125°C (TA) |
Voltage - Supply | 4．5V ~ 5．5V |
Memory Type | Volatile |
Access Time | 20 ns |
Memory Format | SRAM |
Technology | SRAM - Asynchronous |
Write Cycle Time - Word Page | 20ns |
Supplier Device Package | 24-CDIP |
Package / Case | 24-CDIP (0．300" 7．62mm) |
Memory Interface | Parallel |
Base Product Number | 6116LA |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | 3A001A2C |
HTSUS | 8542.32.0041 |
Standard Package | 15 |
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