NAND512R3A2DZA6E
TQIN Code
TQ-NAND512R3A2DZA6E
Manufacturer
Micron Technology Inc.
Mfr Part #
NAND512R3A2DZA6E
Detailed Description
FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50 ns 63-VFBGA (9x11)
DataSheet
Product Attributes
TYPE
DESCRIPTION
Mounting Type
Surface Mount
Package
Tray
Product Status
Obsolete
Contact Finish Thickness - Post
Flash
Operating Temperature
-40°C ~ 85°C (TA)
Memory Type
Non-Volatile
Interface
Parallel
Voltage - Supply
1.7V ~ 1.95V
Memory Size
512Mb (64M x 8)
Technology
FLASH - NAND
Response Time
50ns
Settling Time
50 ns
Supplier Device Package
63-VFBGA (9x11)
Package / Case
63-TFBGA
Base Product Number
NAND512
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Standard Package
1 260
In Stock: 0
Fill in below information to get a quote:
Submit
You May Also Be Interested In
MT49H32M18BM-18:B TR
TQ-MT49H32M18BM-18:B TR
Micron Technology Inc.
SST26VF064BA-104I/SM
TQ-SST26VF064BA-104I/SM
Microchip Technology
M29W128GSL70ZA6F TR
TQ-M29W128GSL70ZA6F TR
Micron Technology Inc.