TQIN Semiconductor Limited

STY112N65M5

TQIN Code

TQ-STY112N65M5

Manufacturer

STMicroelectronics

Mfr Part #

STY112N65M5

Detailed Description

N-Channel 650 V 96A (Tc) 625W (Tc) Through Hole MAX247™

DataSheet

Product Attributes

Product Status	Active
Package	Tube
Mounting Type	Through Hole
Voltage - Input (Min)	10V
Output Type	N-Channel
Operating Temperature	150°C (TJ)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Drain to Source Voltage (Vdss)	650 V
Vgs(th) (Max) @ Id	5V @ 250µA
Package / Case	TO-247-3
Power Dissipation (Max)	625W (Tc)
Gate Charge (Qg) (Max) @ Vgs	350 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C	96A (Tc)
Rds On (Max) @ Id Vgs	22mOhm @ 47A 10V
Supplier Device Package	MAX247™
Series	MDmesh™ V
Input Capacitance (Ciss) (Max) @ Vds	16870 pF @ 100 V

In Stock： 15,000 Can Ship Immediately

Fill in below information to get a quote:

Submit

You May Also Be Interested In

FDMC15N06

TQ-FDMC15N06

onsemi

IPB180N04S401ATMA1

TQ-IPB180N04S401ATMA1

Infineon Technologies

FDD5N50UTF_WS

TQ-FDD5N50UTF_WS

onsemi