TP65H050WS
TQIN Code
TQ-TP65H050WS
Manufacturer
Transphorm
Mfr Part #
TP65H050WS
Detailed Description
N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
DataSheet
Product Attributes
TYPE
DESCRIPTION
Product Status
Active
Package
Tube
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Power Dissipation (Max)
119W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247-3
Drive Voltage (Max Rds On Min Rds On)
12V
Technology
GaNFET (Cascode Gallium Nitride FET)
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Rds On (Max) @ Id Vgs
60mOhm @ 22A 10V
Base Product Number
TP65H050
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
In Stock: 15,000 Can Ship Immediately
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