IPS04N03LA G
TQIN Code
TQ-IPS04N03LA G
Manufacturer
Infineon Technologies
Mfr Part #
IPS04N03LA G
Detailed Description
N-Channel 25 V 50A (Tc) 115W (Tc) Through Hole PG-TO251-3-11
DataSheet
Product Attributes
TYPE
DESCRIPTION
Package
Tube
Product Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Stub Leads IPak
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Power Dissipation (Max)
115W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 5 V
Series
OptiMOS™
Vgs(th) (Max) @ Id
2V @ 80µA
Rds On (Max) @ Id Vgs
4mOhm @ 50A 10V
Input Capacitance (Ciss) (Max) @ Vds
5199 pF @ 15 V
Supplier Device Package
PG-TO251-3-11
Base Product Number
IPS04N
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1 500
In Stock: 0
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