IRF8010STRLPBF
TQIN Code
TQ-IRF8010STRLPBF
Manufacturer
Infineon Technologies
Mfr Part #
IRF8010STRLPBF
Detailed Description
N-Channel 100 V 80A (Tc) 260W (Tc) Surface Mount D2PAK
DataSheet
Product Attributes
TYPE
DESCRIPTION
Product Status
Active
Mounting Type
Surface Mount
Package
Tape & Reel (TR)Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Operating Temperature
-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Supplier Device Package
D2PAK
FET Type
N-Channel
Power Dissipation (Max)
260W (Tc)
Drive Voltage (Max Rds On Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
3830 pF @ 25 V
Series
HEXFET®
Rds On (Max) @ Id Vgs
15mOhm @ 45A 10V
Base Product Number
IRF8010
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
In Stock: 7,200 Can Ship Immediately
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