IPP086N10N3G
TQIN Code
TQ-IPP086N10N3G
Manufacturer
Infineon Technologies
Mfr Part #
IPP086N10N3G
Detailed Description
N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
DataSheet
Product Attributes
TYPE | DESCRIPTION |
|---|
Product Status | Active |
Package | Bulk |
Mounting Type | Through Hole |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Drive Voltage (Max Rds On Min Rds On) | 6V 10V |
Power Dissipation (Max) | 125W (Tc) |
Package / Case | TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 100 V |
Series | OptiMOS™ 3 |
Supplier Device Package | PG-TO220-3-1 |
Vgs(th) (Max) @ Id | 3．5V @ 75µA |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
Rds On (Max) @ Id Vgs | 8．6mOhm @ 73A 10V |
ECCN | EAR99 |
HTSUS | 8542.39.0001 |
Standard Package | 1 |
In Stock：
32,600
Can Ship Immediately
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