71V416S10YG8
TQIN Code
TQ-71V416S10YG8
Manufacturer
Renesas Electronics America Inc
Mfr Part #
71V416S10YG8
Detailed Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10 ns 44-SOJ
DataSheet
Product Attributes
TYPE
DESCRIPTION
Mounting Type
Surface Mount
Product Status
Obsolete
Package
Tape & Reel (TR)
Voltage - Supply
3V ~ 3.6V
Memory Type
Volatile
Operating Temperature
0°C ~ 70°C (TA)
Memory Format
SRAM
Technology
SRAM - Asynchronous
Package / Case
44-BSOJ (0.400" 10.16mm Width)
Supplier Device Package
44-SOJ
Memory Size
4Mb (256K x 16)
Write Cycle Time - Word Page
10ns
Access Time
10 ns
Memory Interface
Parallel
Base Product Number
71V416S
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Standard Package
500
In Stock: 0
Fill in below information to get a quote:
Submit
You May Also Be Interested In
AS7C4096A-12TCNTR
TQ-AS7C4096A-12TCNTR
Alliance Memory, Inc.
AS7C34098A-15JCNTR
TQ-AS7C34098A-15JCNTR
Alliance Memory, Inc.
S99ML04G10042
TQ-S99ML04G10042
Cypress Semiconductor Corp